来源：Lam Research 这导致了如下图 6 所示的堆叠结构。单个单元的占用空间比 3D NAND 单元的占用空间大得多，但无论如何实现，它都比传统 DRAM 密度高得多。 Vincent 提醒道：“蚀刻和沉积专家可能会对我们的模拟结果感到震惊。例如，我们考虑在我们的架构中蚀刻 ...

Lam Research 全球半导体工艺与集成高级 ... 生产成本就越低。” 值得注意的是，3D DRAM 可以指代两个不同的概念。一个已经投入生产的概念是高带宽 ...

Lam Research 半导体工艺和集成全球高级 ... 多的比特意味着生产成本的降低。" 值得注意的是，3D DRAM 可以指两个不同的概念。 一种是已投入生产的 ...

相较 2.5D 封装 DRAM 内存的现有 HBM 方案（被用于英伟达、AMD 等的 AI GPU），3D 堆叠 DRAM 内存可实现更短的逻辑-存储物理间距，同时信号走线也更为 ...

Leuven, Belgium – Ocotober 1, 2009 – IMEC and its 3D integration partners have taped-out Etna, a new 3D chip integrating a commercial DRAM chip on top of a logic IC. The new 3D stack resembles as ...

San Jose, California, May 13, 2024 – NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced a performance boosting Floating Body Cell ...

LRCX's fiscal second-quarter results are expected to reflect the benefits of a rebound in the semiconductor industry and improving memory spending.

has been selected by a leading memory manufacturer as production tool of record for the most advanced DRAM processes. A breakthrough introduced by Lam in 2020, dry resist extends the resolution ...

Lam's dry resist approach overcomes the biggest challenges of transferring fine DRAM designs to a wafer. "Lam's dry resist approach overcomes the biggest challenges of transferring fine DRAM ...