来源：Lam Research 这导致了如下图 6 所示的堆叠结构。单个单元的占用空间比 3D NAND 单元的占用空间大得多，但无论如何实现，它都比传统 DRAM 密度高得多。 Vincent 提醒道：“蚀刻和沉积专家可能会对我们的模拟结果感到震惊。例如，我们考虑在我们的架构中蚀刻 ...

But as we look toward the end of the decade, it seems likely that the world will see the emergence of 3D monolithic stacked DRAM. The only questions that remain are what form it will take and when ...

相较 2.5D 封装 DRAM 内存的现有 HBM 方案（被用于英伟达、AMD 等的 AI GPU），3D 堆叠 DRAM 内存可实现更短的逻辑-存储物理间距，同时信号走线也更为 ...

Leuven, Belgium – Ocotober 1, 2009 – IMEC and its 3D integration partners have taped-out Etna, a new 3D chip integrating a commercial DRAM chip on top of a logic IC. The new 3D stack resembles as ...

San Jose, California, May 13, 2024 – NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced a performance boosting Floating Body Cell ...

These breakthrough results pave the way towards low-power and high-density monolithic 3D-DRAM memories. Scaling traditional 1T1C (one transistor one capacitor) DRAM memories beyond 32Gb die density ...

ONTO recently inked a $69 million volume purchase deal with a top DRAM manufacturer ... key advancements in its product suite for 3D interconnect process control, unveiling the 3Di technology ...

Featuring advanced 3D DRAM stacking technology, FPU3.0 delivers a fivefold boost in power efficiency over the previous FPU2.0 architecture, setting a new standard for energy-efficient, ...

Featuring advanced 3D DRAM stacking technology, FPU3.0 delivers a fivefold boost in power efficiency over the previous FPU2.0 architecture, setting a new standard for energy-efficient, high ...