We are exploring the ability of low energy electrons to enhance ALD reactions. The goal is to reduce the temperature of ALD reactions. Our recent work has concentrated on low temperature GaN ALD using ...

思锐智能提供了原位等离子体处理、原位生长高质量的PEALD膜层、热法ALD的一套三步解决方案，可改善GaN器件的动态性能，降低器件的回滞，已通过 ...

positioning β-Ga₂O₃ as a viable alternative to SiC and GaN in the field of wide-bandgap semiconductors. Image Credit: OkyayTech ALD Get access to the full paper ...