来自MSN2 个月
院士领衔！北京科技大学在二维半导体领域取得新突破
第一作者为姜鹤博士。 研究背景 通过化学气相沉积(CVD)已经成功实现晶圆级MoS2单晶的生长。然而，多核生长法存在由拼接引发的晶界缺陷问题 ...
EurekAlert!1 年
V-doped MoS2 monolayer is achieved through chemical vapor deposition method. (IMAGE)
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