Extreme-ultraviolet (EUV) lithography at 13.5 nm is expected ... This radiation is focused using high-quality zone plates and multilayer optics onto a back-illuminated CCD camera.

Developing EUV lithography, however ... a high-reflectivity ellipsoidal molybdenum–silicon multilayer mirror collects and focuses the light from the plasma. As well as maximizing the power ...

Special multi-layer mirrors guide the light through plates called ... primary hypothesis that the energy efficiency of existing EUV lithography sources for semiconductor production can be improved ...