Intel将会使用High-NA EUV光刻机生产14A也就是1.4nm级工艺产品 ，但具体时间和产品未定，有可能在2026年左右量产，或许用于未来的Nova Lake、Razer Lake。

快科技2月26日消息，ASML Twinscan EXE:5000 EUV是当今世界上最先进的EUV极紫外光刻机，支持High-NA也就是高孔径，Intel去年抢先拿下了第一台，目前已经在 ...

the field of lithography has seen a dramatic reduction in both the half-pitch feature size and the wavelengths used, but at very different rates. Extreme-ultraviolet (EUV) lithography involves ...

然而，这类芯片的制造高度依赖极紫外（EUV）光刻技术，该技术本身的规模化瓶颈已成为制约行业发展的关键障碍。 自2019年首批商用EUV芯片问世以来，设备迭代、掩模生成和光刻胶技术的持续改进已使该技术趋于稳定。尽管良率持续提升，但与成熟度更高的深 ...

快科技2月25日消息，Intel宣布，ASML首批两台高数值孔径（High-NA EUV）极紫光刻机已经在其工厂投入生产。初步数据显示，其效率、可靠性比上一代EUV ...

imec, the research and innovation hub, has announced the first electrical test (e-test) results obtained on 20nm pitch metal line structures patterned after single-exposure High NA EUV lithography.

By way of example, TSMC's N3E node as used in the latest Apple chips has gate pitch of at minimum 45 nm and a metal pitch of ...

Belgian research lab Imec has revealed test results from 20nm pitch metal lines patterned using a single-exposure of high NA (numerical aperture) EUV lithography. Top-down SEM pictures of 20nm pitch ...