Data centers power demands have grown considerably with LLMs, leaving power companies eager to show their solutions at APEC 2025.

TI’s 48V stackable integrated hot-swap eFuse with power-path protection empowers designers to tackle high-power ... To simplify data centre design TI has also introduced a new family of integrated GaN ...

"Powering Modern AI Data Centers with an Integrated 48V Hot-Swap eFuse Device." The new power stages integrate a high-performance gate driver with a 650V GaN field-effect transistor (FET ...