A linear nanowire photodetector/switch has been realized in ZnO (ref. 87), InP (ref. 88) and CdS (ref. 89) nanowires fabricated into a horizontal transistor configuration where an optical flux ...

Rongrui He and Peidong Yang have reported giant uniaxial piezoresistance in p-type silicon nanowires that is almost two orders of magnitude larger than that found in bulk silicon 1. Here ...