These unmatched discrete transistors provide up to 50W of saturated ... According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in 2022 to $2.7B ...

One option for combating a scaling-induced hike in leakage current is to insert a high -κ dielectric between the gate metal ...

diode-based RF Switches commonly used in RF front ends of many of today’s tactical and military communication radio systems. Developed using a wide-bandgap GaN High Electron Mobility Transistor (HEMT) ...

Guerrilla RF, Inc ... the first in a new class of GaN on SiC HEMT power amplifiers being developed by the company. These unmatched discrete transistors provide up to 50W of saturated power ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in ...

Built on a wide-bandgap GaN HEMT process, Teledyne’s TDSW84230EP reflective SPDT switch covers 30 MHz to 5 GHz, handling 20 W of continuous power. It is intended to replace PIN diode-based RF switches ...

Infineon Technologies, STMicroelectronics, ROHM and Nexperia have become high-volume GaN transistor manufacturers but there is now a growing number ... “GaN was discovered back in the 1930s and it was ...

Strengths of the double-heterostructure devices, made by engineers at Nanyang Technical University, A*STAR, the Singapore-MIT ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in 2022 ...