Another area of focus has been on reducing the actuation voltage of RF MEMS switches. Traditional electrostatic switches often require high voltages due to their design, which can limit their ...
This RF switch is Reflective type and the design incorporates series-shunt circuit elements with the locations optimized to achieve outstanding broadband performance in 2 - 20 GHz. The combination of ...
Built on a wide-bandgap GaN HEMT process, Teledyne’s TDSW84230EP reflective SPDT switch covers 30 MHz to 5 GHz, handling 20 W of continuous power. It is intended to replace PIN diode-based RF switches ...
Teledyne HiRel Semiconductors has announced the availability of its Gallium Nitride (GaN) high-power RF switch, model ...
Teledyne HiRel Semiconductors announces the availability of its Gallium Nitride (GaN) high-power RF switch, model TDSW84230EP.