腾讯网26 天
青岛杀出隐形独角兽：年入4.67亿，打破垄断
ALD能够在原子层面上精确地沉积薄膜，就如同用最精细的画笔在芯片上绘制图案，这种特性使其在第三代半导体材料（如碳化硅SiC和氮化镓GaN ...
AZoM on MSN5 个月
Beta-Phase Gallium Oxide Films Using Plasma-Enhanced Atomic Layer Deposition (PEALD) at 200°C
positioning β-Ga₂O₃ as a viable alternative to SiC and GaN in the field of wide-bandgap semiconductors. Image Credit: ...