We’ve been eagerly following [ProjectsInFlight]’s stepwise journey toward DIY semiconductors, including all the ups and downs, false leads, and tedious optimizations needed to make it possible ...

Etching seems like such an old-fashioned technique (for a time it was also an Olympic competition) that you don’t normally ...

While anodic oxidation of crystalline Si under constant current in aqueous or ethanolic solutions of HF is without question the most common porous Si preparative method [1], an intrinsically easier ...

3) Si wet and dry etching: Si wet etching is the processing wafers by selectively dissolving them using chemicals (etchant). Si dry etching is the processing wafers using high-vacuum plasma.

Anisotropic wet etching is a common method for fabricating nanowires from various materials, such as silicon, germanium, or III-V semiconductors. By using etchants with high selectivity for specific ...

and followed by an alkaline solution etching step to the desired thickness, according to the team. The SiNx layer provides protection and enables the silicon in the edge region of the wafer to ...

To obtain anisotropic profiles, the DSiE technique or the Deep Reactive Ion Etching (DRIE) repeatedly integrates isotropic silicon etching and passivation steps. With the help of a high-density plasma ...

During the plasma etching of interconnect, positive ions and neutral species from the plasma get strikes at interconnector these are collected by the interconnects, so if the area of the interconnect ...

“This is followed by the step-by-step removal of the backside contact, the silver contacts, the anti-reflective layer and finally the emitter by wet chemical etching. The silicon cleaned in this ...

SAL, an leading Austrian research centre, is implementing ULVAC’s plasma etching system Model NLD-5700 to advance R&D of TFLN ...