▲ 点击上方蓝字关注我们，不错过任何一篇干货文章！近年来，随着磁性隧道结（MTJ）存储器件的持续创新，磁性随机存储器（MRAM）在高可靠高性能MCU及SoC ...

STT-MRAM technology enjoys low power coupled with low cost due to the ability of the magnetic tunnel junction (MTJ) device to be embedded at the back-end of line (BEOL) interconnect layer of the chip ...

The latter uses an effect called “spin-transfer-torque (STT)” to change the magnetization by polarized electrons. Fig. 1 Basic structure of an MTJ when two ferromagnetic (FM) layers are in parallel ...

Figure 2: (a) Shows the thermal stability of the circular diameter for the novel designed advanced-Quad-interface MTJ developed in this study and the conventional Double-interface MTJ.

The TMR ratio, defined as the relative change in resistance between the parallel and antiparallel states, is a critical parameter that determines the performance of MTJ-based devices. In addition to ...