▲ 点击上方蓝字关注我们，不错过任何一篇干货文章！近年来，随着磁性隧道结（MTJ）存储器件的持续创新，磁性随机存储器（MRAM）在高可靠高性能MCU及SoC 中逐步实现应用，并将扮演越来越重要的角色。半导体头部代工厂如台积电（TSMC）、三星（Samsung）、格罗方德（Globalfoundries）等已纷纷推出eMRAM IP, ...

STT-MRAM technology enjoys low power coupled with low cost due to the ability of the magnetic tunnel junction (MTJ) device to be embedded at the back-end of line (BEOL) interconnect layer of the chip ...

Today’s best-developed version is called “spin-torque transfer,” or STT MRAM. (There’s an older stand-alone technology called “toggle MRAM,” which is not covered here.) The programming current goes ...

The latter uses an effect called “spin-transfer-torque (STT)” to change the magnetization by polarized electrons. Fig. 1 Basic structure of an MTJ when two ferromagnetic (FM) layers are in parallel ...

Figure 2: (a) Shows the thermal stability of the circular diameter for the novel designed advanced-Quad-interface MTJ developed in this study and the conventional Double-interface MTJ.

The TMR ratio, defined as the relative change in resistance between the parallel and antiparallel states, is a critical parameter that determines the performance of MTJ-based devices. In addition to ...