In addition, we identify VBL 3-D DRAM as a better candidate for future scaling toward short-BL (small storage capacitor) 3-D DRAM using low-leakage access transistors, with up to $4\times $ higher ...

Abstract: As the dynamic random-access memory (DRAM) process is being scaled down, the sensing margin of the bit-line sense amplifier (BLSA) is decreasing. This leads to sensing failure due to the ...

Fig 5: Standard Cell Placement before Decoupling Capacitor/Filler Addition After the standard cells (for logic implementation) are placed in the rows, the next step is to add decoupling capacitors to ...

Capacitorless DRAM: A DRAM design that eliminates the need for capacitors, allowing for smaller and more efficient memory cells. Grain Boundary (GB): The interface between two grains, or ...

Conventional dynamic RAM (DRAM) devices have basic storage units consisting of transistors and capacitors. However, the stored data is volatile, meaning that energy input is required to retain the ...

Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, China Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong ...

Patrick Holland has been a phone reviewer for CNET since 2016. He is a former theater director who occasionally makes short films. Patrick has an eye for photography and a passion for everything ...

School of Bio-Chemical Engineering and Technology, Sirindhorn International Institute of Technology, Thammasat University, Pathum Thani 12120, Thailand Research Unit in Sustainable Electrochemical ...

Quantifying the mechanical responses of cell interiors or complex biomolecular materials should lead to a better understanding of cellular differentiation and aging, and could also accelerate drug ...