2019年6月1日 · In this research we have investigated electronic transitions in InN/GaN QD super-lattice structure (QDSL) from valence band (VB) to intermediate band (IB) and from IB to conduction band (CB), which cause the inter and intra band photonic absorption, leading to higher photo-generated current.

2017年7月27日 · In this work, we present a comprehensive analysis of the ultra-short period superlattice-based InN/GaN digital alloy (DA) structure as a potential alternative into the high crystalline...

2024年3月1日 · In this work, the ultra-thin InN/GaN superlattices (SL) were designed for long-wavelength light emission and investigated by first-principles simulations. The crystallographic and electronic properties of SL were comprehensively studied, especially the strain state of InN well layers in SL.

2017年11月22日 · It is shown that for In (Ga)N/GaN superlattices it is possible to exceed by far the range of band gap values, which can be realized in ternary InGaN alloys. During several years the properties of...

2018年9月1日 · The plot shows that the fundamental absorption edges of the (BN) 1 /(InN) 1, (AlN) 1 /(InN) 1 and (GaN) 1 /(InN) 1 superlattices belong to a range of the visible spectrum. However, it is also showed that α ( ω ) is broadened in the energy region of UR spectra, with an emergence of important multi-peaks along this zone, this is due to the fact ...

2019年3月1日 · In this research we have investigated electronic transitions in InN/GaN QD super-lattice structure (QDSL) from valence band (VB) to intermediate band (IB) and from IB to conduction band (CB),...

2012年5月24日 · InN/GaN superlattices offer an important way of band gap engineering in the blue-green range of the spectrum. This approach represents a more controlled method than the band gap tuning in quantum well systems by application of InGaN alloys.

2013年5月20日 · Creation of short-period InN/GaN superlattices is one of the possible ways of conducting band gap engineering in the green-blue range of the spectrum. The present paper reports results of photoluminescence experiments, including pressure effects, on a superlattice sample consisting of unit cells with one monolayer of InN and 40 monolayers of GaN.

2018年9月1日 · Band gap engineering by means of semiconductor heterostructures/superlattices has been proven as a powerful tool for this purpose. As tunable band gaps semiconductors, conventional group-III-nitrides (GaN, AlN, and InN) and their alloys have been widely used for ultraviolet optoelectronic devices [1].

2013年9月27日 · Using TEM-based methods, we have undertaken a detailed study of nano-sized superlattices introduced in GaN NWs, consisting of nine bilayers of InGaN inclusions/GaN barriers, in order to shed light on the critical issue of the association between their structure and strain state with the InN mole fraction of the inclusions and thus, the emission ...