Photodetector - Wikipedia
Based on device structure, photodetectors can be classified into the following categories: MSM Photodetector: A metal-semiconductor-metal (MSM) photodetector consists of a semiconductor layer sandwiched between two metal electrodes. The metal electrodes are interdigitated, forming a series of alternating fingers or grids.
Recent Progress in Photodetectors: From Materials to Structures …
2024年10月11日 · This review will provide a comprehensive overview of recent advancements in photodetector technologies, focusing on three major areas: (1) the synthesis of emerging photodetecting materials, including perovskites, polymers, two-dimensional materials, and quantum dots; (2) novel photodetector structures and the impact of these materials on their ...
Photodetector - an overview | ScienceDirect Topics
The most common semiconductor photodetector is the PIN photodiode. The device structure consists of p and n regions separated by a very lightly n-doped intrinsic (i) region. An interesting photodetector developed with a packaging consideration is illustrated as follows.
Silicon/2D-material photodetectors: from near-infrared to mid …
2021年6月9日 · In this paper, we review the recent progresses of silicon/2DM PDs particularly working in the windows from the NIR-band of 1.31/1.55 μm to the MIR-band of 2–6 μm, which are very attractive for...
Multifunctional Perovskite Photodetectors: From Molecular-Scale …
2023年7月29日 · In this section, we will focus on an overview of the molecular-scale crystal structure design of perovskite materials and micro/nano-scale morphology manipulation by different processing techniques, the operating mechanisms of photodetector devices, and figures of merit of photodetectors.
A review on the recent progress on photodetectors | Journal of ...
2024年11月27日 · The structure of the photodetector, as shown in Fig. 14b, indicates the potential application of GeTe in infrared detection. GeTe presents substantial opportunities for integration into other fields, particularly computing and storage, leveraging GeTe-based materials.
A thin film optoelectronic photodetector of spherical and linear ...
1 天前 · We report the fabrication and characterization of a Bi(III) oxide/polypyrrole (Bi2O3/Ppy) nanocomposite thin film optoelectronic photodetector synthesized by a simple one-pot method. The ...
All‐Optical Modulation Photodetectors Based on the …
2 天之前 · In this manuscript, an all-optical modulation photodetector based on a CdS/graphene/Ge sandwich structure is designed. In the presence of the modulation (near-infrared) light, the Fermi level of the graphene channel shifts, allowing for the tuning of the visible light response speed as well as achieving a broad responsivity range from negative (-3376 A/W) to positive (3584 A/W) response.
Characterization and Modeling of Interfacial Photogating Effect in ...
3 天之前 · (a) Schematic structure of a GFET photodetector, including Al 2 O 3 /graphene/SiO 2 /p-Si structure, source and drain contacts. (b) Resistance–voltage transfer curve of a GFET device ( L = 10 and W = 20 μm) under dark conditions and V DS = 0.2 V at room temperature for determining the mobility of carriers in the graphene channel.
Fabricating In2O3 NPs /MWCNTs heterostructure photodetectors …
2 天之前 · The fabricated photodetector showed a high sensitivity for Vis–NIR detection. The limit detection of In2O3 NPs -MWCNTs/Si photodetector was determined to be 3.39 × 1011 Jones at 450 nm. ... In the current situation, photodetector fabrication in the form of a diode structure is a popular device. The selection of semiconducting materials is ...