Band structure and carrier concentration Basic Parameters Temperature Dependences Dependence of the Energy Gap on Hydrostatic Pressure ... Band structure and carrier concentration of InSb 300 K E g = 0.17 eV E L = 0.68 eV E X = 1.0 eV E so = 0.8 eV: Temperature Dependences Temperature dependence of the energy gap

2007年7月3日 · The valence band structure of InSb is found to be exactly the same by both present ETB and DFT calculations. The sharp and smooth variations of the band structure of InSb around Γ and X points, respectively have been produced successfully by the present ETB

2022年1月20日 · In summary, we have studied the electronic structure of the InAs(001), InAs(111), and InSb(110) surfaces using DFT simulations and ARPES experiments. The DFT simulations employed a recently developed method of adding a Hubbard U correction determined by machine learning to a semi-local functional.

The electronic band structure of InN, InAs and InSb has been investigated by ETB. The ETB method has been formulated for sp3d2 basis and nearest neighbor interactions of the compounds and its energy parameters have been derived from the results of the present first principles calculations carried on InN, InAs and InSb.

2019年9月1日 · The electronic structure of InSb was investigated using density functional theory (DFT). The 2D buckled structure of InSb shows a direct band gap (1.29 eV) and high electron mobility. Furthermore, an intrinsic electric polarization of ~12.6 pC/m was observed.

2019年1月9日 · Our theoretical analysis predicts that the variation in the thickness of the InSb layer in InSb/InSb 0.5 As 0.5 heterostructure renders altered bandgaps with different characteristics (i.e., direct or indirect). The study holds promise for fabricating heterostructures, in which the modulation of the thickness of the layers changes the number of ...

We have performed first-principles calculations using full potential linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT) to investigate the fundamental...

We identify that the stimulated emission of GaN laser diodes (LDs) emerges far below the traditionally recognized threshold from both optical and electrical experiments. Below the threshold, the...

In this article, we are reporting band structure, density of states (DOS) and the band gap dependent optical properties of InSb. The calculated direct band gap is 0.17 eV, refractive index is 3.79 and extinction coefficient as 3.22.

2018年1月10日 · Our theoretical analysis predicts that the variation in the thickness of the InSb layer in InSb/InSb_ (0.5)As_ (0.5) heterostructure renders altered band gaps with different characteristics (i.e. direct or indirect).