2 inch diameter Silicon Carbide (SiC) wafers specifications. MSE Supplies offers the best price on the market for high quality SiC wafers and substrates.

MSE Supplies offers 2 inch P-Type Silicon Carbide (SiC) Wafer in either 4H or 6H polytype. It has similar properties as the N-type Silicon Carbide (SiC) wafer, such as high temperature resistance, high thermal conductivity, high electrical conductivity, etc. P-type SiC substrate is generally used for manufacturing power devices, especially the ...

Buy as few as one Silicon Carbide Wafer (SiC) Wafer! New Silicon Carbide SiC Carbide wafers 6H and 4H. 5x5mm, 6x6mm, 10x10mm 6H wafers and 5x5, 10x10, and 2 inch Sic wafers in stock. All of these SiC wafers are N-type.

Browse our ready-to-ship standard 2″ (50.8mm) semiconductor wafers. We supply prime grade 2” silicon wafers, high resistivity float zone silicon wafers, fused silica wafers, and other material wafers precisely fabricated to standard orientation, resistivity, thickness, and TTV specifications.

HMT produces 1200um thickness for 2 inch As-cut SiC wafers (Raw-Cut SiC Wafer) and support customized thickness based on customers requirements. We also have 500um 600um and 900um thickness of As-cut SiC wafers (No Grinding SiC Wafer) both for 4 inch 6 inch. For 2 inch raw cut SiC wafer, we only supply Conductive N type at the present.

HMT company produce Conductive N type 50.8mm 2 inch SiC Wafer with bottom price, we have D grade and P grade of 2 inch SiC Wafers. The diameter is 50.8±0.38mm, resistivity is 0.015-0.025ohm.cm and thickness is 330±25um.

♦️ High-quality silicon wafer for Research and Experiment. ♦️ Provide small quantities, special specifications products, and customized services. ♦️ Global shipping, secure payment, large inventory. ♦️ Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc. Silicon Wafer Specification: Size: 6inch; Method: CZ; Type: P;

Discover the superior performance of Semi-insulating SiC wafers. With high resistance, low impurity levels, and exceptional temperature resilience, they excel in power, RF, and optoelectronic applications.

Electrically Conductive Silicon Carbide wafers can be used as substrates. After homoepitaxial growth, device manufacturing, packaging and testing, SiC substrate can be further made into power devices such as Schottky diodes, MOSFETs, and IGBTs.

4-8 inch SiC ingots. The use of SiC Wafers is expected to increase in the future for power devices. In addition to 2, 4, 6, and 8 inches, we also handle substrates from 5mm square to 10mm square.