2017年12月4日 · This is the datasheet of the driver IC I am working on (LM5112). Following is the application diagram of the module. Basically this is the GATE driver circuit for the MOSFET with PDM signal as the...

2015年9月3日 · Since the gate of the MOSFET has to be V\$_{GS}\$ volts higher than the source, a special IC is needed to translate the logic level at the CTL lead into the much higher gate voltage. Even if the N-channel was being used in a low-side configuration, the driver chip would be needed to properly drive the gate fast enough.

2021年3月10日 · I am trying to understand the curves of a MOSFET. Sorry if the question is very basic. Where the red point is is the saturation zone of the MOSFET, therefore the source drain voltage must be 0V because at this point the MOSFET is saturated conduction at maximum current, because on the X axis of the graph called Vds marks 10V for the red point.

2019年1月19日 · [From Question]: MOSFET transistor and normal transistor. A MOSFET is a normal transistor - it's a Metal-Oxide-Semiconductor Field-Effect Transistor. A BJT is another normal transistor - a Bipolar Junction Transistor. The question itself doesn't make much sense in that regard. But lets assume for now you mean BJT when you say "normal".

2022年6月10日 · The ideal diode circuit gives you the benefit of reverse protection, a very small voltage drop across the MOSFET, and protection for the MOSFET by regulation of the gate voltage. The IC has a low current draw, a wide voltage range (IN can survive -28 V to 100 V for the LTC4372), and aren't that complicated.

2020年6月4日 · the method you are persuing is calculating the average current needed to switch a MOSFET. This is one part of the calculation as one of the key need is the peak current to ensure you are switching fast enough. what the best way to calculate Rg gate driver for Mosfet. As far as your calculations are concerned, this is only half of the calculation.

2023年10月9日 · It seems that unfortunately different manufacturers use slightly different notation. Usually V_DSS or V_DS(max) are the maximum allowable Drain-Source voltage according to manufacturer datasheet, the same for V_GS(max) but for Gate-Source voltage.

2024年4月10日 · I am using a MOSFET as a low side switch. If I do not use a freewheeling diode to discharge the energy stored in the inductor, what is the numerical value of the spike cause at the intersection node of the inductor and the drain of the low side N-channel MOSFET when it is turned off? Is there an equation describing this? Diagram given below.

2020年7月23日 · The comparator is just a simple MOSFET where the output is connected to VCC and drain and the V+ pin is connected to the gate of the MOSFET and the source is connected to the source of the MOSFET. When the difference between V+ and V- is greater than the threshold voltage of the MOSFET and V+ has bigger voltage than V- it turns on.

2019年2月1日 · \$\begingroup\$ The capacitance is mostly related to the gate area of the MOSFET, so width x length. Series resistance is more complex, the silicon substrate has some resistance so if you contact it with a larger area (long drains and sources meaning a wide MOSFET) then series resistance becomes smaller. \$\endgroup\$ –