2000年6月1日 · For the as-grown Mg-doped GaN, the room temperature photoluminescence (PL) spectra show a blue emission peak around 420–450 nm, and the spectral peak depends on …

2021年10月1日 · In this study, the correlation and detailed mechanism between PL and EL are systematically analyzed by considering the effects of carrier escape, carrier accumulation, …

2021年8月1日 · From the p-GaN/n-GaN junction μCs, two strong PL emissions were observed at 420 nm and 560 nm, tentatively originated from outershell p-GaN and core n-GaN, …

2017年3月30日 · By performing spatial-resolved photoluminescence (PL) and Raman spectral mapping, we propose to directly investigate and reveal the possible correlation among PSS, …

2016年9月19日 · Here, we demonstrate high-brightness polarized green light emission from an InGaN/GaN light-emitting diode (LED) structure by combining the strong coupling between …

420nm for p-GaN and In-doped p-GaN films. The lumines-cence intensity shows marked changes below 420nm, which reflect different mechanisms for the 3.1 and 2.8eV emis-sions. …

2019年5月8日 · As we know, the bandgap of bulk GaN is ∼3.4 eV (366 nm) at the room temperature, the PL band located at ∼420 nm should be caused by the exciton emission of …

For the as-grown Mg-doped GaN, the room temperature photoluminescence (PL) spectra show a blue emission peak around 420-450 nm, and the spectral peak depends on the carrier …

2020年2月29日 · The PL spectra of GaN-NPs@water are mainly distributed between 420 nm and 440 nm, and there are two obvious PL peaks at 425 nm and 440 nm in their spectra. The PL …

2021年3月25日 · We review modern approaches of quantitative analysis of PL from point defects in GaN. The updated classification of defects in undoped GaN and their latest identifications …