Investigation of hot-carrier-injection assisted TDDB and multi …
We demonstrated that hot-hole assisted TDDB can be initiated by a 3-stage hot-hole induced leakage current (HHLC), i.e. interface traps generation at initial stage, oxide traps at 2 nd …
Building-in reliability in BCD (Bipolar-CMOS-DMOS) technologies
2013年10月1日 · Examples of BIR reliability assessments include gate oxide integrity (GOI) through Time-Dependent Dielectric Breakdown (TDDB) studies and degradation of laterally …
深亚微米CMOS器件中栅氧化层的经时击穿行为(TDDB)及其机理研 …
2019年2月16日 · 绝缘击穿分为两种情况，一种是氧化层加上电压立即短路的瞬时绝缘击穿（Time-zero dielectric breakdown，TZDB）；另一种是氧化层连续加上适当的电压后才产生短路的经 …
Examples of BIR reliability assessments include gate oxide integrity (GOI) through Time-Dependent Dielectric Breakdown (TDDB) studies and degradation of laterally diffused MOS …
Abstract — We present a new BCD technology in a 0.18 ȝm technology platforms with a capability of 7 to 60V high-voltage devices such as DEMOS and LDMOS. The developed 0.18 ȝm BCD …
Investigation of hot-carrier-injection assisted TDDB and multi …
2017年4月2日 · In this work, we showed that the mechanism of burnout is due to HCI assisted TDDB (HA-TDDB) as evident from various Vg and temperature dependence characterization. …
SMIC 0.18 BCD工艺仿真 - Analog/RF IC 设计讨论 - EETOP 创芯网 …
2023年1月13日 · 当然是可以再高，但是需要根据电压和总面积依照TDDB模型推算寿命. LDMOS能用于高压的地方不是栅级，LDMOS因为引入了漂移区，他的drain端能承受高压， …
浅谈EOS防护—电路可靠性设计（一）_专业集成电路测试网-芯片 …
2023年11月10日 · 影响器件可靠性的三种常见机理：1.HCI（Hot Carrier Injection），2.N\PBTI（Negative/Positive Bias Temperature Instability），3.TDDB (Time …
Investigation of hot-carrier-injection assisted TDDB and multi …
2017年4月1日 · In this paper, a reliable TDDB lifetime projection by modeling the gate leakage current degradation is proposed. The validity of model is demonstrated by the good …
Building-in reliability in BCD (Bipolar-CMOS-DMOS) technologies
Examples of BIR reliability assessments include gate oxide integrity (GOI) through Time-Dependent Dielectric Breakdown (TDDB) studies and degradation of laterally diffused MOS …