The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

10n60由tf(拓锋)设计生产，立创商城现货销售。 10N60价格参考￥1.41。 下载10N60中文资料、引脚图、Datasheet数据手册，有场效应管(MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。

See detailed ordering, marking and shipping information on page 6 of this data sheet. 3. Insertion mounted. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

10N60 10 Amps, 600/650 Volts N-channel Power Mosfet DESCRIPTION. The UTC is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and …

2022年3月19日 · Part Number: 10N60, FQPF10N60, FQPF10N60C. Function : N-Channel Power MOSFET ( 600V,10A ) Package: TO-220, TO-220F Type. Manufacturer: Nell Semiconductor, Fairchild. This post explains for the transistor 10N60. Image

Part #: 10N60. Description: 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET. File Size: 232.49 Kbytes. Manufacturer: Unisonic Technologies.

The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

The Nell 10N60 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts.

10N60F Datasheet and Replacement Type Designator: 10N60F Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 52 W |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V |Id|ⓘ - Maximum Drain Current: 10 A Tjⓘ - Maximum Junction Temperature: 150 °C trⓘ - …