2020年1月6日 · Our results indicate that electron correlation induces a robust Mott insulator state in single-layer 1T-TaSe 2 that is accompanied by unusual orbital texture. Interlayer coupling weakens the...

2021年8月19日 · Spectroscopic imaging of isolated single-layer 1T-TaSe 2 reveals long-wavelength super-modulations at Hubbard band energies, consistent with the predicted behaviour of itinerant spinons.

2022年7月19日 · In this article, we review the recent progress of the scanning tunneling microscopy studies of 1 T -TaS 2 and 1 T -TaSe 2 for bulk single crystals and molecular beam epitaxy monolayer films. We focus on how to understand the Mott insulating state in the whole set of materials, even when the stacking order takes effect.

5 天之前 · We also discuss the analysis of flat band physics in the isostructural crystals 1 T -TaSe 2 and 1 T -NbSe 2 in the Supplementary Material (SM), which both exhibit similar phenomenology 23, 24, 25 ...

2023年5月16日 · The mechanism makes 1T-TaSe 2 surface layers a Mott insulator, and resolves the dichotomy between metallic bulk and insulating surface of 1T-TaSe 2. These results establish 1T-TaSe 2 as a fully tunable, correlated 2D material with a high correlation energy.

2023年2月20日 · Employing density functional theory, it is uncovered that the stacking order can play a significant role in the quantum phase transitions of layered 1T-TaSe 2 with a striking 2D CDW order. By controlling the vertical stacking order of CDWs, bulk 1T-TaSe 2 can host various electronic phases including quasi-1D and 3D metals and band insulators.

2022年3月30日 · 对不同浓度的Ti掺杂1T-TaS2的研究中，发现了：1、由单个Ti原子在Ta 位的掺杂导致的自旋空穴，和其在特定能量下诱导出的复杂电子轨道结构；2、在0.01掺杂下莫特绝缘谱转变成了近似赝能隙的V-型金属态谱，并形成纳米畴状结构和金属畴界，共同导致了材料电输运 ...

2019年12月23日 · Combining the molecular beam epitaxy growth, scanning tunneling microscopy measurements and first-principles calculations, we prepare monolayer 1 T -TaS 2 and TaSe 2 and explore their electronic structures at the atomic scale. Both two-dimensional (2D) compounds exhibit commensurate charge density wave phase at low temperature.

2023年10月11日 · The fully open gap unveiled by tunneling spectroscopy, which can be further manipulated by the proximity of a metal tip, is confirmed by transport measurements from micrometric to millimetric scales, demonstrating a robust Mott insulating phase at up to 400 K. KEYWORDS: monolayer 1T-TaSe 2 molecular beam epitaxy Mott semiconductors charge ...

2 天之前 · The valence bands of 1 T -TaS 2 (or 1T-TaSe 2) near the Fermi level originate mostly from Ta $5d_ {z^ {2}}$ orbital, which has distinct polarization selection rules of photoemission from S 3 p (or Se 4 p) bands. [44, 46, 48] The polarization dependence of the pseudogap spectral feature follows unambiguously that of a Ta $5d_ {z^ {2}}$ orbital ...