The LNA achieves a NF of 3.1-3.7 dB (3.4±0.3 dB) at 24-43 GHz, an in-band IIP3 of -13.2 to -19 dBm at 20-40 GHz, all at a power consumption of 20.5 mW. Operation at 12 mW is also shown, with a maximum gain and minimum NF of 18.2 dB and 3.4 dB at 24-43 GHz.

Discover LNA_024_005 – a 24 GHz low noise amplifier with 3.2 dB noise figure, ideal for wideband radar and K-band RF applications.

K-band RF capabilities of 90nm RF-CMOS combined with thin-film above-IC high-Q inductors is assessed by means of a 24 GHz LNA. The LNA, implemented as a single stage common-source amplifier led to state-of-the art results for CMOS technology at 24 GHz.

To facilitate the construction of a transceiver at 24.192 GHz, a dual stage LNA has been designed using the NE32984D. This paper details the design, construction, and testing of that LNA as part of a senior design project at the University of California, San Diego (UCSD).

This paper presents a 24-44 GHz ultra-wideband (UWB) low-noise amplifier (LNA); simultaneously covering all major 5G cellular frequency bands. The LNA has been designed in 45nm CMOS SOI technology, has a maximum gain of 20 dB with more than 65% 3dB bandwidth (24-47.5 GHz), and a noise figure less than 5.5 dB (typical 4.7 dB) in the band.

Design, analysis, and implementation of a novel wideband LNA in 24-GHz frequency range using 8XP 0.13-μm SiGe BiCMOS technology. technique, called peaking technique. It enhances 1-dB compression point and expands gain flatness

The design targets the creation of a highly linear low noise amplifier (LNA) operating at 24 GHz, essential for improving receiver performance in high data rate and short-range communication applications.

In this letter, we present an ultra-low-power 24 GHz low-noise amplifier (LNA) in 0.13 CMOS technology. A peak gain of 9.2 dB and a minimum noise figure of 3.7 dB are achieved with a DC power consumption of 2.78 mW only.

24GHz LNA 采用标准 180 nm CMOS 技术设计。 使用电磁 (EM) 仿真提取版图寄生效应。 优化的 LNA 实现了输入/输出回波损耗\ (- 15.6/ - 11.7\)分贝。 仿真结果显示，在 23.72 GHz 时峰值 S21 为 10.27 dB，在 24 GHz 时 NF 为 3.3 dB，P1dB 为 − 5 dB。

In this thesis, a wideband LNA with low noise figure and high linearity has been designed in 8XP 0.13-um SiGe BiCMOS IBM technology. The highlight of this design is proposing the peaking technique, which results in considerable linearity improvement.