2021年4月5日 · Based on calculations, two-dimensional (2D) beta tellurium dioxide (β-TeO 2) has been proposed as a high-mobility p-type semiconductor 9, and the development of a reliable …

A previously unexplored two-dimensional material, monolayer TeO 2, is proposed to have high stability, a wide direct gap and high carrier mobility, based on first-principles calculations. Our …

Two-dimensional (2D) β-TeO2 is a novel semiconductor with potential applications in electronic circuits due to its air-stability and ultra-high carrier mobility. In this study, we explore the …

2024年11月30日 · Abstract: Wide-bandgap two-dimensional (2D) beta-TeO2 has been reported as a high-mobility p-type transparent semiconductor (Nat. Electron. 2021, 4, 277-283), …

Two-dimensional (2D) β-TeO 2 has gained attention as a promising material for optoelectronic and power device applications, thanks to its transparency and high hole mobility. However, the …

2023年12月1日 · Most recently, a new 2D semiconductor, β-TeO 2, was demonstrated possessing ultra-high hole mobility [42] and the FET based on β-TeO 2 was proved to exhibit …

2019年6月1日 · In this work we probe the Te-O coordination environment in glassy TeO 2 using 2D 125 Te isotropic-anisotropic chemical shift correlation nuclear magnetic resonance (NMR) …

2021年4月1日 · Here, we report the growth of bilayer beta tellurium dioxide (β-TeO2), which has recently been proposed theoretically as a high-mobility p-type semiconductor, through the …

Here, we report the growth of bilayer beta tellurium dioxide (β-TeO 2), which has recently been proposed theoretically as a high-mobility p-type semiconductor, through the surface oxidation …

2018年5月10日 · A previously unexplored two-dimensional material, monolayer TeO2, is proposed to have high stability, a wide direct gap and high carrier mobility, based on first …