2022年5月12日 · Here, we report the temperature-driven α-β phase transformation and the enhanced electronic property of 2H α -In 2 Se 3. We find that 2H α-In 2 Se 3 transforms to β-In 2 Se 3 when it is heated to a high temperature, and the transformation temperature increases from 550 to 650 K with the thickness decreasing from 67 to 17 nm.

Atomically thin two-dimensional (2D) van der Waals materials have exhibited many exotic layer-dependent physical properties including electronic structure, magnetic order, etc. Here, we report a striking even–odd layer dependent oscillation in the ferroelectric polarization of 2H-stacked few-layer α-In2Se3 n

2024年7月1日 · By transferring α -In 2 Se 3 (2H) nanosheet and Ag top electrode, the α -In 2 Se 3 (2H) based vertical memristor with atomically clean metal-In 2 Se 3 interface shows the ultra-low switching voltage (∼0.3 V), excellent endurance (>225 cycles) and retention (>1 × …

2024年6月17日 · Here, we investigate the electric and thermoelectric properties of thin layers of the 2H and 3R polymorphs of α -In 2 Se 3 embedded in solid-state three-terminal devices. Charge transport measurements reveal a hysteretic behavior that can be ascribed to the effect of ferroelectric polarization at the metal electrode/2D semiconductor interfaces.

Here, we report a striking even–odd layer dependent oscillation in the ferroelectric polarization of 2H-stacked few-layer α-In2Se3 nanoflakes. As characterized by piezoresponse force microscopy (PFM), when the in-plane (IP) electric polarization of 2H-stacked α-In2Se3 films is electrically aligned, the out-of-plane (OOP)

2022年5月12日 · 我们发现当加热到高温时2H α-In 2 Se 3转变为β-In 2 Se 3 ，转变温度从550 K升高到650 K，厚度从67 nm减小到17 nm。 此外，在相变温度以下对样品进行退火可以有效改善2H α-In 2 Se 3场效应晶体管的电子性能，包括增加通态电流、降低断态电流、改善亚阈值摆幅。

In this review, the current 2D ferroelectric materials are summarized and discussed in detail from seven aspects: theoretical prediction, fabrication methods, ferroelectric characterization...

2019年12月2日 · Raman spectra are directly correlated to individual In 2 Se 3 phases, providing fingerprints for identifying various phases of In 2 Se 3. In addition, obvious out-of-plane ferroelectricity of 2H α-In 2 Se 3 was also observed by piezoresponse force microscopy, enabling its potential application in ferroelectric devices.

2025年3月6日 · The development of polarization photodetectors utilizing two-dimensional materials holds significant promise due to their distinctive properties and potential for high integration. However, a major limitation of most current polarization photodetectors is their lack of polarization tuning capability, which restricts the versatility of …

将高质量的2H α-In2Se3单晶纳米片制备成铁电基场效应晶体管器件，发现极化反转可诱导一种负微分效应，所对应的矫顽场（∼1.625 kV/cm）比传统铁电材料小1-2数量级，在白光照射下峰电流密度被进一步增大，通过背栅电压调控，器件的峰/谷电流比能高达7。