2N3019/D 2N3019, 2N3019S, 2N3700 80V, 1A NPN Small Signal Transistor Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Collector−Emitter Voltage VCEO 80 Vdc Collector−Base Voltage VCBO 140 Vdc Emitter−Base Voltage VEBO 7 ...

2n3019价格参考￥111.99。 MICROCHIP(美国微芯) 2N3019参数名称：晶体管类型：NPN；集电极电流(Ic)：1A；集射极击穿电压(Vceo)：80V；直流电流增益(hFE)：50@500mA,10V；集电极截止电流(Icbo)：10uA；集射极饱和电压(VCE(sat))：500mV；工作温度：-65℃~+200℃@(Tj)。

The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.

2025年3月11日 · 2N3019 Microchip Technology Bipolar Transistors - BJT 80V 1A 800mW Small-Signal BJT THT datasheet, inventory, & pricing.

This 2N3019 silicon NPN transistor device is military qualified up to the JANS level for high-reliability applications. This transistor is available in a TO-205AA (TO-5) Long Lead package as well as a TO-205AD (TO-39) package, when S suffix is added.

2N3019是一款80V硅NPN晶体管, 设计用于放大器和开关应用. 高击穿电压; 低泄漏电流; 低容量; Beta可用于极宽的电流范围; Multicomp Pro产品的评分为4.6 (满分5星) 12个月有限保修, 详细信息, 请参阅查看条款和条件; 96％客户推荐

3 天之前 · 2N3019 STMicroelectronics Bipolar Transistors - BJT NPN General Purpose datasheet, inventory, & pricing.

2N3019 2N3020 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V

Order today, ships today. 2N3019 – Bipolar (BJT) Transistor NPN 80 V 1 A 800 mW Through Hole TO-5 from Microchip Technology. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

来自 Microchip Technology 的 2N3019 – 晶体管 - 双极 (BJT) - 单 NPN 80 V 1 A 800 mW 通孔 TO-5。 DigiKey 提供数以百万计电子元器件的定价和供应信息。