2N3771/D 2N3771, 2N3772 High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features • Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772
2N3771 Datasheet (PDF) - Mospec Semiconductor
Description: POWER TRANSISTORS (150W). Manufacturer: Mospec Semiconductor.
General Purpose and Low VCE(sat) Transistors | 2N3771 - onsemi
The 20 A, 60 V NPN Bipolar Power Transistor is designed for linear amplifiers, series pass regulators and inductive switching applications. Product services, tools and other useful resources related to 2N3771. If you wish to buy products or product samples, please log in to your onsemi account. I C Cont. (A) Loading...
2N3771_SPTECH(深圳质超)_2N3771中文资料_PDF手册_价格-立创 …
2N3771由SPTECH (深圳质超)设计生产，立创商城现货销售。 2N3771价格参考￥6.73。 下载2N3771中文资料、引脚图、Datasheet数据手册，有三极管 (BJT)详细引脚图及功能的应用电路图电压和使用方法及教程。
2N3771, 72 Datasheet by onsemi - Digi-Key Electronics
View 2N3771, 72 by onsemi datasheet for technical specifications, dimensions and more at DigiKey.
2N3771 NPN Power Transistor – Datasheet - Circuits DIY
2021年4月10日 · The 2N3771 is silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers
2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.
2N3771 Transistor: 2N3771 NPN Power Transistor, Datasheet, …
2022年1月22日 · The 2N3771 is a high-power NPN transistor that can handle up to 30A of collector current. The transistor also has a low base threshold voltage of less than 5V and a high collector to emitter voltage of 40V, making it appropriate for high current switching devices.
2N3771/D 2N3771, 2N3772 High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features • Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772
2N3771 STMicroelectronics | Mouser
6 天之前 · 2N3771 STMicroelectronics Bipolar Transistors - BJT NPN Power Switching datasheet, inventory, & pricing.