
2SC1971 Datasheet (PDF) - Mitsubishi Electric Semiconductor
2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications. FEATURES High power gain: Gpe ≥ 10dB, @VCC = …
2SC1971_SPTECH(深圳质超)_2SC1971中文资料_PDF手册_价格-立 …
2SC1971由SPTECH(深圳质超)设计生产,立创商城现货销售。2SC1971价格参考¥15.73。下载2SC1971中文资料、引脚图、Datasheet数据手册,有三极管(BJT)详细引脚图及功能的应用电 …
2SC1971 -PDF数据手册-参考资料-立创商城
立创商城提供 sptech(深圳质超) 的 三极管(bjt) 2sc1971 的pdf数据手册和参考资料,查看 2sc1971 数据手册和购买 2sc1971 上立创商城。
2SC1971 Datasheet and Replacement - All Transistors
2SC1971 Transistor Datasheet pdf, 2SC1971 Equivalent. Parameters and Characteristics
2SC1971参数_晶体管元件查询_电子爱好者 - dianziaihaozhe.com
发射极与基极反向漏电流(I EBO): 500 μA. 工作频率(f): 175 MHz. 直流放大系数(h FE): 10~180. 芯片材质: 硅. 封装: TO-220AB.
2SC1971 Datasheet PDF – RF Power Amplifier – Mitsubishi
2018年6月10日 · 2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications. Pinouts: Features. 1. Emitter ballasted …
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1971 DESCRIPTION ·High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V ·High …
2SC1971 三菱-MITSUBISHI_PDF_数据手册_Datasheet_规格书_三菱 …
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2SC1971 Datasheet (PDF) - Advanced Semiconductor
The ASI 2SC1971 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1971 in Most Applications • High Gain …
2SC1971 数据表 (PDF) - Mitsubishi Electric Semiconductor
2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications. FEATURES High power gain: Gpe ≥ 10dB, @VCC = …
2SC1971 Datasheet - MITSUBISHI ELECTRIC
2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications. FEATURES High power gain: Gpe ≥ 10dB, @VCC = …
C1971 Marking, 2SC1971 Datasheet(PDF) - Mitsubishi Electric …
2SC1971: 153Kb / 1P: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio
2SC1971 Datasheet, Transistor, Mitsubishi Electric Semiconductor
2SC1971 Description. NPN Transistor. Download (Size : 127.94KB) 2SC1971 Datasheet
New Jersey Semiconductor | 2SC1971 - Datasheets.com
2014年8月7日 · New Jersey Semiconductor's 2SC1971 is a npn epitaxial planar type transistor. in the bipolar transistors, rf bjt category. Check part details, parametric & specs updated 23-JAN …
2SC1971 pdf, 2SC1971 Download, 2SC1971 Description, 2SC1971 …
Download 2SC1971 Datasheet. File Size: 127.93 Kbytes. Part #: 2SC1971. Description: NPN EPITAXIAL PLANAR TYPE (for RF power amplifiers on VHF band Mobile radio applications). …
2sc1971应该如何使用? - 鑫杰瑞科技网 - jerry.net.cn
2025年1月5日 · 2SC1971是一款常用于射频放大器的NPN型双极性功率晶体管,广泛应用于无线通信设备中,其高频率响应和高增益特性使其成为设计射频放大器的理想选择,以下将详细介 …
Mitsubishi Electric | 2SC1971 - Datasheet PDF & Tech Specs
1997年11月28日 · Mitsubishi Electric's 2SC1971 is a trans rf bjt npn 17v 2a 3-pin(3+tab) to-220. in the bipolar transistors, rf bjt category. Check part details, parametric & specs and download …
2SC1971 Datasheet, PDF - Alldatasheet
Description: NPN EPITAXIAL PLANAR TYPE (for RF power amplifiers on VHF band Mobile radio applications). 6 Results. Datasheet: 63Kb/1P. Manufacturer: Advanced Semiconductor.
2SC1971 NPN Transistor: 2SC1971 Power Transistor, 17V, 2A
2021年12月23日 · 2SC1971 is a silicon NPN epitaxial planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications. This article is going to talk about …
Similar Description - 2SC1971 - ALLDATASHEET.COM
Part #: 2SC1971. Description: NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications). File Size: 127.93 Kbytes. Manufacturer: Mitsubishi Electric …