Description: Low Level and General Purpose Amplifiers. 30 Results. Datasheet: 1MbKb/4P. Manufacturer: Nanjing International Group Co.

2SC536 Transistor Datasheet pdf, 2SC536 Equivalent. Parameters and Characteristics

2sc536是一种npn型双极性晶体管，广泛应用于各种电子设备中，主要用于小功率放大器和开关电路。本文将详细介绍其应用场景和参数特点。 一、应用场景： 1. 音频放大器：在音频设备中，2sc536常用于前级放大电路，以提升音频信号的电平。它的低噪声特性使其 ...

2SC536 onsemi Transistors parts available at DigiKey.

2SC536 TRANSISTOR (NPN) FEATURES z General Purpose Amplifier Transistor MAXIMUM RATINGS (T a=25℃ unless otherwise noted) S Symbol Parameter Value Unit V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 30 V V EBO Emitter-Base Voltage 5 V I C Collector Current 0.1 A P C Collector Power Dissipation 0.4 W

2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g

2SC536 onsemi 晶体管 零件可从 DigiKey 订购。

Description: Low Level and General Purpose Amplifiers. Manufacturer: Micro Electronics.

2SC536 TRANSISTOR (NPN) FEATURES Power dissipation P CM: 400 mW (Tamb=25℃) Collector current I CM: 100 mA Collector-base voltage V (BR)CBO: 40 V Operating and storage junction temperature range T J, T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

集电极与基极反向击穿电压（BV CBO）： 40 V. 集电极与发射极反向击穿电压（BV CEO）： 35 V. 特征频率（f T）： 100 MHz. 直流放大系数（h FE）： 320.