Part #: 2SK2850. Download. File Size: 258Kbytes. Page: 12 Pages. Description: N-Channel Enhancement Mode Power MOSFET. Manufacturer: Fuji Electric.

Features Directly driven by a 4.0 V power source. Low on-state resistance RDS (on)1 = 105 m MAX. (VGS =

2 Characteristics 2SK2850-01 FUJI POWER MOSFET 0 50 100 150 0 25 50 75 100 125 150 Power Dissipation PD=f(Tc) PD [W] Tc [oC]100 101 102 103 10-2 10-1 100 101 102 t=0 ...

Download 2SK2850 Datasheet. File Size: 258.83 Kbytes. Part #: 2SK2850. Description: N-Channel Enhancement Mode Power MOSFET. Manufacturer: Fuji Electric.

2SK2850-01: 258Kb / 12P: N-Channel Enhancement Mode Power MOSFET Hitachi Semiconductor: 2SK2851: 50Kb / 10P: Silicon N Channel MOS FET High Speed Power Switching Renesas Technology Corp: 2SK2851: 206Kb / 10P: Silicon N Channel MOS FET High Speed Power Switching Sep.07,2005: 2SK2851TZ-E:

部件名: 2SK2850. 下载. 文件大小: 258Kbytes. 页: 12 Pages. 功能描述: N-Channel Enhancement Mode Power MOSFET. 制造商: Fuji Electric.

2SK2850 Datasheet : N-CHANNEL SILICON POWER MOSFET, 2SK2850 PDF VIEW Download Fuji Electric, 2SK2850 1 page Datasheet PDF, Pinouts, Data Sheet, Equivalent, Schematic, Cross reference, Obsolete, Circuits. Electronic component search and free download site.

替代型号 Hot! 半导小芯为您提供 2SK2850 富士-FUJI 的资料查询：富士-FUJI数据手册查询，富士-FUJI规格书查询，富士-FUJI datasheet查询，富士-FUJI IC查询、半导体查询、富士-FUJI芯片查询、富士-FUJI替代型号查询、富士-FUJI产品、富士-FUJI应用等相关信息，帮您快速找到2SK2850的数据手册、规格书、datasheet、替代型号、联系方式、技术参数、选型文档、技术文档、丝印Making等芯片资料。

View results and find 2SK2850 datasheets and circuit and application notes in pdf format.

iscwebsite：www.iscsemi.cn 2 isc&iscsemiisregisteredtrademark iscN-ChannelMosfetTransistor 2SK2850 ·ELECTRICALCHARACTERISTICS(TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0;ID=1mA 900 V VGS(th) GateThresholdVoltage VDS=10V;ID=1mA 2.5 3.5 V R DS(on) Drain-SourceOn-Resistance VG =10V;I =3A 2.5 Ω IGSS Gate-BodyLeakageCurrent VGS= ±30V;VDS=0 ...