2SC3355 Datasheet(PDF) - NEC
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
2SC3355 Datasheet (PDF) - Renesas Technology Corp
Description: NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION. Manufacturer: Renesas Technology Corp.
2SC3355 Datasheet (PDF) - Renesas Technology Corp
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga= 9.0 dB TYP. @ VCE= 10 V, IC= 40 mA, f = 1 GHz
2021年11月2日 · The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic.
2SC3355 Datasheet and Replacement - All Transistors
2SC3355 Transistor Datasheet pdf, 2SC3355 Equivalent. Parameters and Characteristics
2SC3355参数_晶体管元件查询_电子爱好者 - dianziaihaozhe.com
类型： NPN三极管. 总耗散功率（Ptot）： 0.6 W. 集电极电流（IC）： 0.1 A. 集电极最大允许电流（I CM）： 0.15 A. 集电极与基极最高耐压（V CBO）： 20 V. 集电极与发射极最高耐压（V …
Silicon NPN RF Transistor 2SC3355 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 1.0 µA IEBO Emitter Cutoff Current VEB = 1V; I C= 0 1.0 µA hFE DC Current Gain IC= 20mA ; V CE = 10V 50 300
2SC3355,2SC3355 pdf中文资料,2SC3355引脚图,2SC3355电路 …
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic.
2SC3355 瑞萨-Renesas_PDF_数据手册_Datasheet_规格书_瑞萨 …
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2SC3355 数据表 - 用于放大低噪声和高频 - DigChip
是一种NPN硅外延晶体管，专为甚高频、UHF和CATV频段的低噪声放大器而设计。 具有兰格动态范围和良好的电流特性. 低噪声和高增益 1.1 dB TYP. 8.0 dB TYP. @VCE = 7 mA， = 1.0 GHz 1.1 dB TYP.， 9.0 dB TYP. @VCE = 40 mA， = 1.0 GHz 高功率增益 MAG 11 dB TYP. @VCE = 20 mA， = 1.0 GHz. 包装图（单位：mm）是一个P通道垂直MOS FET，可用作开关元件。 2SJ358. 静电放电噪声剪裁二极管（双型，阳极通用）3针迷你模具产品系列是专为E.S.D（静电放电） …