Description: NPN SILICON PLANAR EPITAXIAL TRANSISTOR. Manufacturer: Unisonic Technologies.

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部件名: 2SC3358. 下载. 文件大小: 31Kbytes. 页: 2 Pages. 功能描述: NPN SILICON PLANAR EPITAXIAL TRANSISTOR. 制造商: Unisonic Technologies.

2016年3月5日 · NPN外延硅晶体管音频功率放大器特征*集电极耗散PC=1W*3W输出应用*SA98A补1TO-9NL1：发射器：收藏家3：基本绝对最大额定值（TA=5°C除非另有规定）参数集电极基极电压集电极-发射极电压发射极基极电压集电极耗散集电极电流结温储存温度符号VCBOVCEOVEBOPcIcTjTSTG等级303051150-55~+150单元VVVWA°C°C电气特性（TA=5 ...

2SC3358是NPN型小功率高频 三极管，采用TO-50四脚微带封装。 它的管脚排列如下： 从长脚开始，顺时针数1234 1脚：集电极； 2脚：发射极； 3脚：基极； 4脚：发射极 2SC3358参数 集电极-基极最高耐压V CBO =20V 集电极-发射极最高耐压V CEO =12V

Description: HIGH FREQUENCY LOW NOISE AMPLIFIER. Manufacturer: Unisonic Technologies.

2021年12月6日 · 2SC3358 High-Frequency Low-Noise Transistor is designed for High-frequency low noise amplifier application.

集电极与基极反向漏电流（I CBO）： 1 μA. 发射极与基极反向漏电流（I EBO）： 1 μA. 特征频率（f T）： 7000 MHz. 直流放大系数（h FE）： 50~300. 封装： TO-50.

2025年1月6日 · The 2SC3358 is NPN silicon epitaxial planar type BJT, commonly used in different applications wherever high-frequency characteristics and low noise are necessary like in amplifier applications. This transistor has high voltage & high-speed switching, high current gain, and low CE saturation voltage.

*Low Noise and High Gain *High Power Gain 2 4 1 TO-50 1:COLLECTOR 2:EMITTER 3:BASE 4:EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER.C3358 Description. 2SC3358