These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

©2004 Fairchild Semiconductor Corporation RFP30N06LE, RF1S30N06LESM Rev. B1 RFP30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously.

30n06l-vb价格参考￥1.85。 VBsemi(微碧半导体) 30N06L-VB参数名称：类型：1个N沟道；漏源电压(Vdss)：60V；连续漏极电流(Id)：45A；耗散功率(Pd)：3W；阈值电压(Vgs(th))：3V；栅极电荷量(Qg)：11nC@10V；输入电容(Ciss@Vds)：1.5nF@25V；反向传输电容(Crss)：60pF@25V；工作温度：-55 ...

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

30N06由UMW (友台半导体)设计生产，立创商城现货销售。 30N06价格参考￥0.3801。 UMW (友台半导体) 30N06参数名称：类型：1个N沟道；漏源电压 (Vdss)：60V；连续漏极电流 (Id)：30A；导通电阻 (RDS (on))：23mΩ@10V；耗散功率 (Pd)：55W；阈值电压 (Vgs (th))：1V；栅极电荷量 (Qg)：25nC@10V；输入电容 (Ciss@Vds)：1.562nF@25V；反向传输电容 (Crss)：66.8pF@25V；工作温度：-55℃~+150℃。 下载30N06中文资料、引脚图 …

Low Gate Charge (Typ. 15 nC) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching • Low Crss (Typ. 50 pF) performance and high avalanche energy strength.

立创商城提供utc(友顺)的场效应管(mosfet)30n06l-ta3-t中文资料,pdf数据手册,引脚图,封装规格,价格行情和库存，采购30n06l-ta3-t上立创商城

The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.