We demonstrate an ultra-wideband 32-GS/s SiGe track-and-hold amplifier with 58-GHz bandwidth and a compact footprint due to the inductorless design. The circuit achieves a third harmonic …

Feb 1, 2012 · GLOBALFOUNDRIES 32 nm high-k metal gate technology, with SiGe channel for V T control of P-field effect transistor, is taken into production. This epitaxial channel material is …

Dec 20, 2023 · SiGe BiCMOS工艺 集成技术，是在制造电路结构中的双极晶体管时，在硅基区材料中加入一定含量的锗，形成 应变硅异质结构晶体管，以改善双极晶体管特性的一种硅基工 …

Jan 8, 2025 · alias: 锗化硅,SiGe. 在SiGe 材料中随着Ge成分的增加，其禁带宽度从硅的1.17电子伏递减到锗的0.67电子伏，能带宽度的变化降低了材料的电阻率。用SiGe 材料制成的晶体管 …

Realized in a SiGe-BiCMOS process, and operating at 1.5 V supply voltage, the doubler achieves state-of-the-art conversion gain (6 dB), ${P_{\mathrm{ sat}}}$ (5.7 dBm) and efficiency (17%). …

May 9, 2022 · 源漏区嵌入SiGe应变材料可以提高PMOS的速度。 它是通过外延生长技术在源漏嵌入SiGe材料，从而对沟道产生单轴压应力，改变硅价带的能带结构，降低空穴的电导有效质量。

Feb 1, 2012 · GLOBALFOUNDRIES 32nm high-k metal gate technology, with SiGe channel for VT control of P-field effect transistor, is taken into production. This epitaxial channel material is …

A 32 GSample/sec SiGe HBT comparator for ultra-high-speed analog-to-digital conversion Abstract: This paper presents a monolithic master-slave comparator in an ECL configuration …

Dec 20, 2024 · 通过在外延过程中引入一定比例的锗（Ge），形成的SiGe单晶层不仅能够降低带隙宽度，还可以增大 晶体管 的特征截止频率fT (cut-off frequency)，这使得它在无线和光 通信 …

In this paper, we design and fabricate a 32-GS/s 6-bit digital-to-analog convertor (DAC) based on SiGe technology. The DAC uses double sampling technique and segment current steering …