Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates Data in addition to JEDEC Requirements. See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. 2. Pulse Test: Pulse Width 300 s; Duty Cycle 2%. Figure 3. Capacitance.

MMBT3906由ST (先科)设计生产，立创商城现货销售。 MMBT3906价格参考￥0.0311。 ST (先科) MMBT3906参数名称：晶体管类型：PNP；集电极电流 (Ic)：200mA；集射极击穿电压 (Vceo)：40V；耗散功率 (Pd)：350mW；直流电流增益 (hFE)：100@10mA,1V；特征频率 (fT)：250MHz；集电极截止电流 (Icbo)：50nA；集射极饱和电压 (VCE (sat))：400mV。 下载MMBT3906中文资料、引脚图、Datasheet数据手册，有三极管 (BJT)详细引脚图及功能的应 …

MMBT3906L, SMMBT3906L www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage

下载MMBT3906 2A (RANGE:100-300)中文资料、引脚图、Datasheet数据手册，有三极管 (BJT)详细引脚图及功能的应用电路图电压和使用方法及教程。

This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-ble above the recommended operating conditions and stressing the parts to these levels is not recommended.

Part #: 2N3906. Download. File Size: 145Kbytes. Page: 6 Pages. Description: General Purpose Transistors (PNP Silicon). Manufacturer: ON Semiconductor.

MMBT3906 onsemi / Fairchild 雙極結晶體管 - BJT PNP General Purpose 資料表、庫存和定價。

MMBT3906 - PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: MMBT3904.

MMBT3906，215是一款PNP开关晶体管，塑料封装.适用于开关和线性放大. 立创商城MMBT3906,215型号页面提供型号详细中文资料，PDF数据手册在线查看和下载,中文参数，引脚图，代替型号和在线购买等信息。 买MMBT3906,215型号,上立创商城.

2017年5月27日 · 三极管 MMBT3906 中文规格参数资料.pdf,DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3906 PNP switching transistor Product specification 2000 Apr 11 Philips Semic