Description: Dual Gate Mosfet VHF Amplifier (N-Channel, Depletion). Manufacturer: Motorola, Inc.

Part #: 3N212. Download. File Size: 116Kbytes. Page: 1 Pages. Description: Discrete Semiconductors. Manufacturer: American Microsemiconductor.

This Dual gate mosfet diode is packaged in TO-72 package, which has a power dissipation of 360mW. Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add "PBF" suffix for Pb-free lead finish. Dual Gate Mosfets are used in VHF and UHF amplifier circuits.

3N212 Transistor Datasheet, 3N212 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Description: Dual Gate Mosfet VHF Amplifier (N-Channel, Depletion). File Size: 69.78 Kbytes. Manufacturer: Motorola, Inc.

DUAL GATE MOSFET VHF AMPLIFIER.

3N212 Description. Dual Gate Mosfet VHF Amplifier (N-Channel/ Depletion).

Get 3N212 MOSFET transistor Datasheets, PDF, Specification, Characteristics, Material, Polarity, Power Dissipation, Package and Symbols. Find 3N212 transistor equivalent substitute

3N212 Motorola Duel-Gate Mosfet VHF Amplifier (NOS) Type of Control Channel: N -Channel; Maximum Power Dissipation: 0.36 W; Maximum Drain-Source Voltage: 27 V; Maximum Gate-Source Voltage: 35 V; Minimum Gate-to-Source Cutoff Voltage: 0.2 V; Maximum Drain Current: 0.05 A; Maximum Junction Temperature: 200 °C; Maximum Drain-Source On-State ...