3N212 Datasheet (HTML) - Motorola, Inc: 3N212 Product details: Dual Gate Mosfet VHF Amplifier(N-Channel/ Depletion) Similar Part No. - 3N212: Manufacturer: Part # Datasheet: Description: New Jersey Semi-Conduct... 3N212: 149Kb / 1P: DUAL-GATE MOSFET VHF AMPLIFIER Digitron Semiconductors: 3N212:

3N212 3N213 Unit Drain Source Voltage VDS 27 35 Vdc Drain Gate Voltage VDG1 VDG2 35 35 40 40 Vdc Drain Current ID 50 mAdc Gate Current IG1 IG2 ±10 ±10 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 360 2.4 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.2 8.0 Watt mW/°C Lead Temperature, 1/16” from ...

3N212 Datasheet (HTML) - American Microsemiconductor: 3N212 Product details: Discrets Semiconductors. FETs For VHF Amplifiers and Mixers. For Low Noise Amplifiers. Low leakage/Noise Current. Dual Gate Mosfets (N Channel Depletion) Low leakge. Similar Part No. - 3N212: Manufacturer: Part # Datasheet: Description:

3N212 Datasheet (HTML) - New Jersey Semi-Conductor Products, Inc. 3N212 Product details: DUAL-GATE MOSFET VHF AMPLIFIER(N-Channel/ Depletion) Similar Part No. - 3N212: Manufacturer: Part # Datasheet: Description: Motorola, Inc: 3N212: 69Kb / 2P: Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion)

3N212 manufactured by: Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion) Download 3N212 datasheet from Motorola: pdf 73 kb : Trans MOSFET N-CH 35V: Download 3N212 datasheet from New Jersey Semiconductor: pdf 94 kb : N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor: Download 3N212 datasheet from Texas Instruments:

3N212 Description. Dual Gate Mosfet VHF Amplifier(N-Channel/ Depletion).

3N212: N-channel-defletion dual-gate MOSFET VHF amplifier. in 4-pin 20-03 package. Operational temperature range from -65 ° C to 175 ° C. Datasheet *) 3N212: N-channel-defletion dual-gate MOSFET VHF amplifier. in 4-pin TO-72 package. Operational temperature range from -65 ° C to 175 ° C. Datasheet *) 3N212

3N212 Datasheet and Replacement Type Designator: 3N212 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 0.36 W |Vds|ⓘ - Maximum Drain-Source Voltage: 27 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 35 V |Id|ⓘ - Maximum Drain Current: 0.05 A Tjⓘ - Maximum Junction Temperature: 200 °C Rdsⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm

3N212 是一款由东芝 (Toshiba) 生产的通用型双运算放大器，采用 SOIC-8 封装。 其内部包含两个独立的运算放大器，每个运算放大器都具有高增益、低偏置电流和低噪声等特点，使其适用于各种模拟电路设计，如音频放大器、滤波器、信号调理电路等。

3N212 Datasheet. Part #: 3N212. Datasheet: 69Kb/2P. Manufacturer: Motorola, Inc. Description: Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion). 4 Results ...