The 4116 is a new generation MOS dynamic random access memory circuit organized as 16,384 words by, 1 bit. As a state-of-the-art MOS memory device, the 4116 (16K advanced circuit techniques are designed to provide wide operating margins, both internally and to the system in speed and power previously seen only in MOSTEK’s high-performance MK ...

Description: 16,384 BIT DYNAMIC RANDOM ACCESS MEMORY. Manufacturer: Motorola, Inc.

1 天前 · Jameco Electronics 4116-15 DRAM. Products in stock and ready to ship. Quotes, samples and datasheets available at Jameco Electronics.

The MK 4116 is a new generation MOS dynamic random access memory circuit organized as 16,384 words by 1 bit. Aa state-of-the-art MOS memory device, the MK 4116 (16K RAM) incorporates advanced circuit techniques provide wide …

operation from O?C to 70°C. The package is designed for insertion in mounting-hole rows on 7,62-mm. (300-mil) centers. Fourteen address bits are required to decode 1 of 16,384 storage cell locations. Seven row-address bits are set up on pins AO through A6 and latched onto the chip by the row-address strobe (RAS). Then the.

Fairchild Semiconductor was a pioneering semiconductor company that was founded in the late 1950s. The company was known for its innovation in the development of the first commercial transistor and for its contributions to the advancement of the integrated circuit technology.

英特尔® 至强® 银牌 4116 处理器（16.5M 高速缓存，2.10 GHz） 规格快速参考、功能和技术。

2025年2月5日 · 4116芯片的设计结构非常巧妙，它是16K*1位的存储器，由它的容量我们可以分析出它应该有1根数据线和14根地址线构成，因为pow(2,10)*pow(2,4)*1,pow(2,10)=1k,但实际上4116芯片只有7个管脚即只有7根地址线，这就涉及到地址线复用的问题，实际上4116芯片是通过 …

.,..4116/MK4116 FUNCTIONAL DESCRIPTION Addressing Fourteen address bits are required toselectoneofthe4116's 16,384 possible bit locations. These 14 address bits are latched on-chip in two groups of seven bits. The Row Address Strobe (RAS) latches the 7-bit row address on its falling edge; similarly, the 7-bit column address is latched by ...

2021年11月11日 · Datasheet for a 4116 16K × 1 bit dynamic RAM.First published 1977-10. Revised 1985-11.