4H(6H)-SiC表面重构的STM/STS研究 - cjvst.cvs.org.cn
In this review, we introduce various surface reconstructions of 4H (6H)-SiC as well as their electronic structures which are analyzed by STM/STS, aiming to promote the development …
ronic structures on surfaces. In this review, we introduce various surface reconstructions of 4H(6H)-SiC as well as their electronic structures which are analyzed by STM/STS, aiming to …
4H (6H)-SiC表面重构的STM/STS研究-【维普期刊官网】- 中文期 …
这篇综述介绍了用STM/STS分析了4H (6H)-SiC的各种表面重构及其电子结构,旨在促进表面科学和碳化硅生长以及器件的发展和进步。
Investigation of the 4H–SiC surface - ScienceDirect
2008年10月15日 · Investigations of the surface structure as a function of temperature, under ultrahigh vacuum (UHV) conditions using scanning tunneling microscopy (STM) and low …
本文利用KMC 模型, 研究了4H-SiC(0001)面聚并台阶形貌演化过程. 该模型充分考虑了ES 和ISB 能量势垒影响, 并将硅原子和碳原子分开考虑实现了对微观原子动力学过程信息更加精, 确的捕捉 …
4H (6H)-SiC表面重构的STM/STS研究 - cpsjournals.cn
Johannesson D,Member S,IEEE,et al. Evaluation of ultrahigh-voltage 4H-SiC gate turn-off thyristors and insulated-gate bipolar transistors for high-power applications [J]. IEEE …
4H(6H)-SiC表面重构的STM/STS研究 - cpsjournals.cn
2023年3月6日 · In this review, we introduce various surface reconstructions of 4H (6H)-SiC as well as their electronic structures which are analyzed by STM/STS, aiming to promote the …
Dry Etching of High Aspect Ratio 4H-SiC Microstructures
2017年3月8日 · Deep reactive-ion etching (DRIE) of high aspect ratio structures in 4H-SiC is demonstrated. Electroplated nickel is used as the etch mask and patterned with openings …
STM/STS Study of 4H (6H)-SiC Surface Reconstructions
In this review, we introduce various surface reconstructions of 4H (6H)-SiC as well as their electronic structures which are analyzed by STM/STS, aiming to promote the development …
Investigation of the Young’s Modulus and the Residual Stress of 4H-SiC …
In order to determinate the mechanical properties (Young’s modulus and residual stress values) of the 4H-SiC film, this study aims to evaluate two experimental techniques: The bulge test and …