Schematic views of (a) 4H-SiC (0001) Si face and 4H-SiC (0001 …
This paper discusses the differences between Si-face and C-face MOS interfaces in 4H-SiC MOSFETs. The two interfaces exhibit unique electrical characteristics, which will be linked with …
Impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on ...
2019年1月18日 · The impact of crystal faces of 4H-SiC in SiO 2 /4H-SiC structures on interface trap densities and mobilities were examined by a method that utilizes Hall effect …
a 面和 m 面 4H-SiC 上无缺陷突变 SiC/SiO2 界面的第 ... - X-MOL
While the a- and m-faces of 4H-SiC have attracted increasing interest for SiC metal–oxide–semiconductor device applications, the electronic and/or geometric structures of …
Enhanced Inversion Mobility on 4H-SiC - IEEE Xplore
2013年1月9日 · Abstract: Low interface trap density and high channel mobility on nonpolar faces of 4H-SiC, such as the (11[2̅]0) a-face, are of fundamental importance in the understanding of …
Structure and electron affinity of the 4H–SiC (0001) surfaces: a ...
2021年4月20日 · Using 4H–SiC as a specific case, this study explores calculation of electron affinities (EAs) of (000) and (0001) surfaces varying chemical termination as a function of …
Crystal faces in 4H-SiC. The Si-face is terminated by Si atoms …
Historically, the (0001) Si-face of 4H-SiC has been the most commonly used since it is commercially available in wafer form. However, there are other faces that could be used, …
First-principles modeling of defect-free abrupt SiC/SiO2 interfaces …
2018年9月12日 · In this study, we constructed model structures of defect-free abrupt SiC/SiO 2 interfaces on a - and m -faces of 4H-SiC and studied their electronic structures. These model …
Mechanism of Heteroepitaxial Growth of Boron Carbide on the Si-Face …
2025年2月14日 · Heteroepitaxial boron carbide (BxC) can be grown on the Si face of 4H-SiC(0001) using a two-step process involving substrate boridation at 1200 °C under BCl3 + …
4H-SiC晶片的晶面相关的电导率特性,Journal of Materials …
2022年6月21日 · 固有的 {0001} 4H-SiC 晶片切割以暴露 {10 0} 和 {1 10} 侧面允许在不同晶体表面上进行电导率测量。该晶片的带隙为 3.20 eV。它的 {0001} 面在 384 nm 处具有很强的发射 …
4H-SiC 中点缺陷的导电性改进,Crystal Growth & Design - X-MOL
由于熔化温度高，4H-SiC衬底存在大量难以去除的缺陷，阻碍了大规模、高电导率4H-SiC衬底的发展。本研究构建并分析了 4H-SiC 中点缺陷的原子模型，主要关注 Si 和 C 原子空位和间隙缺 …
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