Static design eliminates the need for external clocks or timing strobes, while CMOS circuitry reduces power consumption and provides for greater reliability. This device meets JEDEC standards for functionality and pinout, and is avail - able in plastic dual–in–line and plastic small–outline J–leaded packages.

The 6264 is a JEDEC -standard static RAM integrated circuit. It has a capacity of 64 Kbit (8 KB). It is produced by a wide variety of different vendors, including Hitachi, Hynix, and Cypress Semiconductor. It is available in a variety of different configurations, such …

2021年10月28日 · Common Data Input and Output, Three State Output Directly TTL Compatible: All Input and Output Standard 28pin Package Configuration Pin Out Compatible with 64K EPROM HN482764 Capability of Battery Back Up Operation (L-/LL-version) You can download this datasheet for 6264 8Kx8 120ns CMOS RAM – Datasheet from the link given below:

13根地址信号经过芯片内部译码可以选中6264芯片中唯一存储单元。 在与系统总线相连时，通常一一对应接入系统地址总线低13位。 8根双向数据线。 片选信号，CS1（非）=0，CS2=1时该芯片被选中，系统地址总线高位地址线A13~A19和控制信号译码产生片选信号。 输出允许信号，其为低电平时，（且WE（非）为高电平时）CPU才能从芯片中读出数据。 写允许信号，其为低电平时，才允许数据写入芯片。 全地址译码:用全部高位地址作为片选译码信号，低地址作为片内寻 …

2016年5月15日 · The 6264 is an 8kB static RAM, available in 70 to 200 nanosecond access time variants. It can function on both the NES PPU's 8080 style bus (separate /WE and /OE strobes) or on the CPU's 6500 style bus (by grounding /OE and connecting the R/W signal to /WE).

The CY6264 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state drivers.

6264是一种8K×8的静态存储器，其内部组成如图2．5（a）所示，主要包括512×128的存储器矩阵、行／列地址译码器以及数据输入输出控制逻辑电路。 地址线13位，其中A12～A3用于行地址译码，A2～A0和A10用于列地址译码。

6264是8K*8位静态随机存储器 芯片,采用CMOS工艺制造,单一+5V 供电,额定功耗200mW,典型存取时间200ns,28线双列直插式封装. A0-A12为地址线;CE是片选线;OE是读允许线;WE是写允许线. 发表评论即可获得积分！ 详见积分规则.

NC A12 A7 A6 A5 A4 A3 A2 A1 A0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28L SOP 28L PDIP 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE CE2 A8 A9 A11 OE A10 CE1 DQ7 DQ6 DQ5 DQ4 DQ3 WRITE CYCLE2 (Chip Enable Controlled) Rev. 1.0 11 f高速超低功耗静态随机存储器 8K-Word By 8 Bit 6264 封装尺寸 28 pin SOP (330 mil) : SYMBOL UNIT Min. mm A ...

The CY6264 is a high-performance CMOS static RAM orga- nized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state drivers.