2024年9月9日 · 随着dram的不断微缩，dram的存储单元尺寸逐渐从图11(a)中的8f2演变为图11(b)中的6f2，如图中的蓝色平行四边形所示。 图11(b)中的图案明显比图11(a)更加紧密，因此可以实现更高的存储密度。

2012年12月18日 · Hynix has survived and adoption of the bWL and the new 6F2 layout has given the Hynix 31-nm device a smaller cell area comparable to that of other two major SDRAM manufacturers (Samsung and Micron). The figure below shows the square root of DRAM cell area versus technology node.

2024年10月2日 · 随着 cmos工艺按比例缩小到90 nm以下,浅沟槽隔离(sti)引起的机械应力对 mosfet器件性能的影响 越来越严重。通过实验和 tcad仿真研究了 sti应力对一种 sonos结构的90 nm非易失存储器的影响。

2011年1月31日 · We recently acquired Samsung’s latest DDR3 SDRAM, allegedly a 3x-nm part. When we did a little research, we found that the package markings K4B2G0846D-HCH9 lined up with a press release from Samsung last year about their 2 Gb 3x-nm generation DRAMs.

一个标准的 6f2 布局相比于 4f2 布局，使用的是垂直沟道晶体管。出处：中芯 cxmt 在 2023 年国际电子器件会议 (iedm) 上发布的内容。 4f2 描述了以最小特征尺寸 f 为单位的存储阵元面积，类似于标准逻辑单元高度的轨道度量，例如"6t 单元"。

2008年5月20日 · 表1：三星8f2和6f2设计的比较。 为分析6F2设计的效果，Semiconductor Insights分析了两款分别来自三星和现代的具有可比性的80nm DDR2设计(表2)。 表2：80nm DDR2 DRAM设计比较：6F2对8F2。

This paper discusses a manufacturable 6F2 DRAM technology at a 78nm half-pitch feature size that results in the smallest DRAM cell size (0.036µm2) to date. The novel 6F2 cell design utilizes line/space patterning and self-aligned etches to improve

2014年3月26日 · DRAM has moved from 8F2 to 6F2 and may move to 4F2. Extensive Stacking will increase the memory density. Or Wide IO will be adopted. Packaging will became part of the DRAM road map.

In this work, the role of stress and shrinkage during the processing of the sub-70nm shallow-trench isolation (STI) structures filled with a spin-on glass (SOG) material containing perhydro ...

After the 70-nm DRAM node, the STI pitch shrink did not keep pace with the WL pitch shrink until the recessed-channel-array-transistor (RCAT) was introduced by Samsung. RCAT shrunk the STI pitch in the array.