1996年5月1日 · In the present work, we report STM studies of 6H-SiC (0001) and (0003) surfaces cleaned by annealing in the presence of a Si flux in order to investigate the surface structures to resolve some of the discrepancies in the previous studies.

2008年12月4日 · We use in situ low temperature scanning tunneling microscopy (STM) to investigate the growth mechanism of epitaxial graphene (EG) thermally grown on Si-terminated 6H-SiC (0001). Our detailed study of the transition from monolayer EG to trilayer EG reveals that EG adopts a bottom-up growth mechanism.

这篇综述介绍了用STM/STS分析了4H (6H)-SiC的各种表面重构及其电子结构，旨在促进表面科学和碳化硅生长以及器件的发展和进步。 Semiconductor silicon carbide (SiC) is a promising material for high temperature, high frequency, and high power electron devices because of its wide band gap, high thermal conductivity, and high mobility.

2004年6月1日 · Scanning tunneling microscopy (STM) is used to probe the local atomic structure of the 6H-SiC(0 0 0 1) surface together with X-ray photoelectron spectroscopy (XPS) in UHV. We report STM observation of localized clusters assembled in an ordered (6 × 6) arrangement after annealing the (3 × 3) phase at 1000 °C.

绍了用stm/sts分析了4h(6h)-sic的各种表面重构及其电子结构，旨在促进表面科学和碳化硅生长以及器件的发展和 进步。 关键词 碳化硅 4H(6H) 表面重构 扫描隧道显微镜/扫描隧道谱

1999年7月30日 · We used scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and Auger electron spectroscopy (AES) to identify and investigate stable surface reconstructions on 6H–SiC (000 1).

在本论文的第一部分工作中，我们利用扫描隧道显微镜(Scanning tunneling microscopy，STM)研究了SiC外延石墨烯的生长机制以及表面的应力释放。 在石墨烯制备过程中，关于硅(si)原子自SiC衬底分解后到升华离开样品表面这一过程的研究很少。

6h-sic(0001)外延石墨烯的生长 及表面stm研究-本文利用分子束外延技术和扫描隧道显微镜技术,研究了单晶6h-sic(0001)表面外延石墨烯的生长机理。 在不同温度条件下对SiC衬底退火,其表面发生一系列重构变化,从重构,到重构,再到重构,最后在1300℃-1400℃条件下退火,在 ...

2015年12月25日 · 将高质量的6h-sic(0001)样品通过快速进样室传入到mbe腔中，sic表面因和大气有过接触，表面携带了水汽等杂质。 因此我们在超高真空环境中，在400-500℃条件下进行除气(≥8小时)。

2001年4月1日 · Surface reconstructions and surface decomposition of 6H-SiC(0001) covered with Si were observed using scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED). The 3 × 3 structure terminated with Si atoms was obtained by annealing at 1050°C; this changed to a mixture of the graphite 1 × 1 and SiC 6 × 6 by ...