下图是 ASML EUV roadmap, 随着EUV 设备 NA 的增大，可以使得EUV 的最终分辨率达到小于 7nm, 从而使得2nm 制程也成为可能。 EUV roadmap. 至此，通过DUV和 EUV 实现 7nm 制程 …

In semiconductor manufacturing, the "7 nm" process is a term for the MOSFET technology node following the "10 nm" node, defined by the International Roadmap for Devices and Systems …

光罩，也叫光掩膜版,英文名字叫Mask，是一种由石英为材料制成的，可以用在半导体曝光制程上的母版。 而这种从光罩母版的图形转换到晶圆上的过程，就像印钞机工作一样。

Unique EUV mask requirements MBMW Benefit for 7nm, required for 5nm Performance •Resolution (40nm 24nm) •Line Edge Roughness (4nm 2nm) •Local CDU (2.5nm 1.5nm) …

Two significant advances have been just introduced to the volume manufacturing in transition from 7nm to 5nm process nodes: EUV lithography and multibeam mask writing. Combined, …

• Cost model validates cost parity between one EUV mask and three high-end ArFi masks • Reverses scaling trends, improves chip density; should allow for more chips/field and reduce cost

在7nm芯片中，主要的mask层数包括以下几个： 1.核心逻辑层：用于制造芯片的核心逻辑电路，如CPU、GPU等。 2.存储层：用于制造芯片内部的存储单元，如SRAM、DRAM等。

2017年5月22日 · Then, TSMC will extend immersion/multi-patterning at 7nm with plans to insert EUV at the latter stages of 7nm. In contrast, Intel and Samsung hope to insert EUV sooner …

2016年4月21日 · Mask making is becoming more difficult at each node. For example, 193nm wavelength lithography hit its physical limit at 40nm half-pitch. To deal with the diffraction …

7nm芯片mask层数指的是制造7纳米（nm）芯片时所需的掩模层数。 掩模层数是指在芯片制造过程中，逐层叠加的光刻胶和光刻胶掩膜的数量。 每一层光刻胶掩膜都是为了分解和定义芯片 …