2017年2月2日 · We present a 7nm technology with the tightest contacted poly pitch (CPP) of 44/48nm and metallization pitch of 36nm ever reported in FinFET technology. To overcome optical lithography limits, Extreme Ultraviolet Lithography (EUV) has been introduced for multiple critical levels for the first time.

In semiconductor manufacturing, the "7 nm" process is a term for the MOSFET technology node following the "10 nm" node, defined by the International Roadmap for Devices and Systems (IRDS), which was preceded by the International Technology Roadmap for …

CPP反映了整个晶体管单元（CELL）的宽度；而MxP是用来衡量晶体管单元高度的单位，通常被称为Track。 晶体管的高度是MxP的几倍，就叫几个Track，或者几个T

The combination of 27nm fin pitch (FP) and 54nm contacted poly pitch (CPP) as well as the high density SRAM cell size of 0.0262 um 2 is the smallest in the reported FinFET platform. Further scaling is secured with special constructs and the 3 rd generation single diffusion break.

以下是各厂商7nm 制程工艺的特征尺寸和一些工艺参数，我们可以发现其中有两个比较小的特征尺寸，一个是Fin的宽度只有6nm, 另一个是 Gate length 在8~10nm; 7nm Node. 那么7nm 是不是指Fin 的宽度呢？

Intel 7nm 包含Intel 4和Intel 3在内的两个工艺，对标台积电的N4和 N3B ，也是Intel第一个正式采用 EUV光刻机 制造的工艺。在接下来的介绍中，将并行使用Intel 4和Intel 3的材料，二者的基本技术规格是一致的，主要区别是Intel 4 仅有18金属层和240nm HP库的配置，而Intel 3则 ...

We present a 7nm technology with the tightest contacted poly pitch (CPP) of 44/48nm and metallization pitch of 36nm ever reported in FinFET technology. To overcome optical lithography limits,...

We present a 7nm technology with the tightest contacted poly pitch (CPP) of 44/48nm and metallization pitch of 36nm ever reported in FinFET technology. To overcome optical lithography limits, Extreme Ultraviolet Lithography (EUV) has been …

从工艺本身来看，在7nm节点，究竟三星和台积电谁更胜一筹呢？ IC Knowledge的创始人Scotten Jones提出了以下的一些想法： ·接触栅极间距（CPP）——台积电和三星都自称7纳米的CPP为54纳米，但它们两者，的实际栅极节距CPP为57纳米。

2016年12月1日 · We present a 7nm technology with the tightest contacted poly pitch (CPP) of 44/48nm and metallization pitch of 36nm ever reported in FinFET technology. To overcome optical lithography limits,...