800 nm process - Wikipedia
The 800 nm process (800 nanometer process) is a level of semiconductor process technology that was reached in the 1987–1990 timeframe, by companies, such as Intel, ATI Technologies, …
800纳米制程 - 维基百科，自由的百科全书
800纳米制程，又稱0.8微米製程，是半导体制造 制程的一个水平，大约于1989年至1990年左右达成。 [ 1 ] [ 2 ] 这一制程由当时领先的半导体公司如 英特尔 和 IBM 所完成。
Gecco系列-800nm波段飞秒激光器|苏州波弗光电科技有限公司
Gecco ultra ：中心波长：800±20nm；FWHM＞50nm；＞600mW输出平均功率；脉冲持续时间＜215fs ... 中心波长（nm） 800nm±20nm 重复率2 80MHz（70-110MHz可选） 光束尺寸3 …
800 nm process | Engineering - Fandom
The 800 nm process refers to the level of MOSFET semiconductor fabrication process technology that was reached around the 1987–1990 timeframe, by leading semiconductor companies like …
800nm Ti:Sapphire Laser for Material Processing - Laser Crylink
Ti:sapphire lasers are tunable lasers which emit red and near-infrared light in the range from 650 to 1100 nanometers, operating most efficiently at wavelengths near 800 nm.A Ti:sapphire …
800nm激光器
增益介质。一种具有多个简并能级的晶体，电子能级耦合晶格振动能级使得基态和激发态能带变宽。主要吸收峰在 488 nm 处，增益波段在 650nm 到 1200nm ，因此可以产生 3fs 超短脉冲激 …
Laser Diodes, 808nm to 895nm (SHOP FROM ALL OF THE BRANDS)
800 nm 0.002 W TOSA Superluminescent LED - 25nm Bandwidth FWHM - 0.2dB Spectral Ripple EXALOS View. 800 nm 0.005 W Butterfly Superluminescent LED - Forward Voltage of 3V - 5 …
800 nm near-infrared light-excitable intense green-emitting …
2020年10月1日 · In this study, novel 800 nm-excitable and highly intense green-emitting non-NaY(Gd)F 4-based core/shell/shell (CSS) upconversion nanophosphors (UCNPs) are …
在远场800 nm波长的空气中实现分辨率为10 nm的激光材料加工
2023年1月11日 · 用800 nm波长(~1.55 eV)的激光束，需要7个光子才能穿过蓝宝石的~10 eV带隙。这意味着激光烧蚀将被限制在焦体积，其强度高于7光子电离的阈值。因此，理论上，MPI …
Arktis Laser | Scientific Lasers | Arktis Laser - Laserglow
CW 800 nm Lasers The LRD-0800 Series of Collimated Diode (Semiconductor) Lasers are ideal for applications requiring a wavelength of around 800 nm and a wide range of output power …
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