2022年8月8日 · By introducing the concept of effective charged traps, the need for statistical distribution of trap time constants is removed, making RTN prediction similar to aging prediction. The objectives of this work are to report statistical experimental ac RTN data and to test the applicability of integral methodology to them. For the first time, it ...

2017年2月23日 · In this chapter, a special AC RTN characterization technique is proposed to detect RTN or trap behaviors which are usually concealed out of the conventional DC RTN “detectable” window. Results obtained by AC RTN technique reveal that RTN statistics under practical AC operations largely derivate from constant voltage measurement (DC RTN) case.

Based on the new observations of AC RTN in MuGFETs, its impact on typical logic circuits is studied in terms of jitter analysis, with an improved simulation method. The results provide deep understanding of AC RTN, which is critical for the correct prediction and robust circuit design against RTN for future MuGFET technology.

The AC RTN in scaled MuGFETs is studied for the first time in this paper through a new characterization method, and compared with planar FETs. The results reveal deep understanding of statistics, physical mechanisms and device structure dependence of AC RTN, providing accurate prediction

This work also emphasizes the significant influence of fluctuating time constants from voltage switching on the filling probability, which is pivotal in identifying effective traps, determining the optimal switching voltage in circuit design, and accounting for AC RTN during simulation.

2022年8月8日 · Random telegraph noise (RTN) adversely induces time dependent device-to-device variations and requires modeling to optimize circuit design. Many early works were focused under dc test conditions, although digital circuits typically operate under ac conditions and it has been reported that ac RTN is substantially different from dc RTN.

2015年6月1日 · Random telegraph noise (RTN) is one of the important dynamic variation sources in ultrascaled MOSFETs. In this paper, the recently focused ac trap effects of RTN in digital circuits and their impacts on circuit performance are systematically investigated.

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2022年10月1日 · The AC random telegraph noise (AC RTN) in scaled multi-gate FETs (MuGFETs) is experimentally studied for the first time, which is found to have enhanced AC noise activity than planar FETs.

Abstract—Random telegraph noise (RTN) is one of the impor-tant dynamic variation sources in ultrascaled MOSFETs. In this paper, the recently focused ac trap effects of RTN in digital circuits and their impacts on circuit performance are systemat-ically investigated. Instead of trap occupancy probability under.