2018年8月29日 · Considering the case of mono- and by-layered MoS2, bimodal atomic force microscopy (AFM) was used in combination to the finite element method to map the effective spring constant between the...

In this study, the epitaxial growth of 8-in. wafer-scale highly oriented monolayer MoS 2 on sapphire is reported as with excellent spatial homogeneity, using a specially designed vertical chemical vapor deposition (VCVD) system.

2015年3月1日 · Atomic force microscopy (AFM) proved the thickness of the MoS 2 film was about 2 nm. Samples were transferred onto arbitrary substrates in wafer-scale by the general PMMA-assisted etching technique.

2019年6月13日 · Two-dimensional materials provide a variety of large and atomically flat hydrophobic surfaces to facilitate our understanding of hydrophobic interactions. The angstrom resolution capabilities of...

2022年10月1日 · Atomic force microscopy (AFM) measures film thickness and examines surface topography. The statistical analysis of variance (ANOVA) technique is applied to assess temperature effects and validate AFM findings. The growth temperature affects film thickness, surface roughness and grain size.

Here, we demonstrate by extensive density functional theory investigations that the vertical piezoelectricity is enhanced significantly in 2D XN (X = B, Al, Ga) bilayers due to in-plane interlayer...

2019年4月12日 · This study sheds light on the AFM operation when one expects to achieve high-resolution AFM imaging of 2D materials by combining the tip radius with vertical tip–sample distances.

2021年2月1日 · Atomic force microscopy (AFM) tip-based cleaning is a reliable technique to remove interface contaminants and flatten heterostructures. Here, we demonstrate AFM tip-based cleaning applied to hBN-encapsulated monolayer MoS 2 transistors, which results in electrical performance improvements of the devices.

2022年6月9日 · The atomic force microscopy (AFM) methods have allowed basic studies of friction mechanisms on atomically thin 2D materials which intensively address how energy is...

Atomic force microscopy (AFM) was used to study the thin film samples' morphological features and revealed various mechanisms of films structure formation on Si and sapphire substrates. For the thin films samples, the reflection spectra obtained and the values of the optical band gap were determined, which ranged from 1.73 to 1.69 eV.